IQE220N15NM5ATMA1 vs ISC015N06NM5LF2ATMA1 对比
详细并排对比 IQE220N15NM5ATMA1 出自 Infineon 和 ISC015N06NM5LF2ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ 量产中规格对比
| 参数 | IQE220N15NM5ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.84 | $2.21 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at Ta | 7 A | 32 A |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | 3 W |
| Power Dissipation (PD) at Tc | 100 W | 217 W |
| RDS(on) Max at VGS=10V | 22 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 µA) | 3 V |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | 90 nC |
| Input Capacitance (Ciss) | 14 pF | 6.9 nF |
| Output Capacitance (Coss) | 340 pF | 1.3 nF |
| 输出配置 | Single N-Channel | — |
| 封装 | PG-TSON-8-5 (Source-Down) | PG-TDSON-8 FL (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +150C (junction) | — |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 Linear FET 2 (N-Channel) |
| RoHS 状态 | Compliant | — |
| MSL 等级 | 1 | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Pulsed Drain Current (IDM) at Tc | — | 275 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.55 mΩ |
| On-Resistance RDS(on) at VGS=10V (typ) | — | 1.3 mΩ |
| Gate-Source Voltage Rating | — | ±20 V |
| Reverse Recovery Charge (Qrr) | — | 1.3 nC |
| Reverse Transfer Capacitance (Crss) | — | 55 pF |
| 工作结温 | — | -55 °C to +175 °C |
| RoHS | — | Compliant |