IQE220N15NM5CGATMA1 vs IQE050N08NM5CGATMA1 对比
详细并排对比 IQE220N15NM5CGATMA1 出自 Infineon 和 IQE050N08NM5CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE220N15NM5CGATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $1.75 |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS 5 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at Ta] | — |
| On-State Resistance RDS(on) max | 22 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 100 W | 100 W |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| 封装 | PG-TTFN-9-3 (Source-Down) | PG-TTFN-9-1 (Surface Mount) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (estimated from Tj max) | — |
| Technology | Trench MOSFET, OptiMOS 5 | OptiMOS 5 (Source-Down) |
| MSL 等级 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| 引脚数量 | 9 (TTFN) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| 工作温度 | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |