IQEH50NE2LM7UCGSCATMA1 vs IQE020N04LM6CGSCATMA1 对比
详细并排对比 IQEH50NE2LM7UCGSCATMA1 出自 Infineon 和 IQE020N04LM6CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 ✓ 量产中规格对比
| 参数 | IQEH50NE2LM7UCGSCATMA1 | IQE020N04LM6CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.78 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at TA | 54 A | — |
| Continuous Drain Current (ID) at TC | 422 A | — |
| RDS(on) Max | 0.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) typ | 2 V | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 150 W | — |
| Maximum Junction Temperature | 175 °C | — |
| 封装 | PG-WHTFN-9-1 (surface mount) | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) |
| 安装类型 | Surface Mount | Surface Mount |
| Series | OptiMOS 7 | — |
| Technology | Silicon N-Channel Power MOSFET | OptiMOS 6 trench |
| Part Family | — | OptiMOS 6 low-voltage power MOSFET |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current at TA=25°C | — | 25 A |
| Continuous Drain Current at TC=25°C | — | 166 A |
| Maximum RDS(on) | — | 2.0 mΩ (per IQE part-number decode) |
| Power Dissipation at TA=25°C | — | 2.5 W |
| Power Dissipation at TC=25°C | — | 107 W |
| 引脚数量 | — | 9 |
| 工作温度范围 | — | -55 °C to +150 °C (junction, per Infineon MOSFET convention) |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |
| MSL 等级 | — | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) |