IR2101STRPBF vs IR2109STRPBF 对比

详细并排对比 IR2101STRPBF 出自 Infineon 和 IR2109STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IR2109STRPBF IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR2109STRPBF ✓ 量产中

规格对比

参数 IR2101STRPBF IR2109STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.68 $0.61
Configuration Half-Bridge (High-Side and Low-Side), Independent Half-Bridge (High-Side + Low-Side)
Number of Drivers 2 —
Driver Type Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL —
Bootstrap Diode Integrated Integrated
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
封装 8-SOIC (0.154 inch, 3.90 mm Width) 8-SOIC (3.90 mm Width)
安装类型 Surface Mount Surface Mount
工作温度 -40 C to +125 C -40 C to +125 C
MSL 等级 MSL 3 —
RoHS 状态 Compliant Compliant
Product Type — Half-Bridge Gate Driver IC
输出数量 — 2 (High-Side / Low-Side)
High-Side Offset Voltage (Max) — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Peak Source Output Current — 0.2 A (typ)
Peak Sink Output Current — 0.35 A (typ)
Propagation Delay (typ) — 750 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
ton / toff (typ) — 540 ns
Input Logic — Non-Inverting
UVLO — Yes (VCC and VBS)
Dead Time Control — Built-in
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes

数据手册与资源

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