IR2101STRPBF vs IR2181STRPBF 对比

详细并排对比 IR2101STRPBF 出自 Infineon 和 IR2181STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IR2101STRPBF IR2181STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.68 $0.74
Configuration Half-Bridge (High-Side and Low-Side), Independent High and Low Side, Independent
Number of Drivers 2 —
Driver Type Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V and 5 V
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
封装 8-SOIC (0.154 inch, 3.90 mm Width) 8-SOIC (0.154", 3.90 mm width)
安装类型 Surface Mount Surface Mount
工作温度 -40 C to +125 C —
MSL 等级 MSL 3 [DATA_NEEDED: MSL level]
RoHS 状态 Compliant Compliant (PBF suffix)
Input Type — Non-Inverting
Supply Voltage (VCC) — 10 V to 20 V
Output Current (Source) — 1.9 A peak
Output Current (Sink) — 2.3 A peak
High-Side Floating Supply Voltage (VBS) — Up to 600 V offset
Propagation Delay (typ) — 180 ns
Rise Time (typ) — [DATA_NEEDED: rise time]
Fall Time (typ) — [DATA_NEEDED: fall time]
dV/dt Immunity — Yes
Negative Transient Voltage Tolerance — Yes
Undervoltage Lockout — Independent for high-side and low-side
工作温度范围 — -40 C to +125 C
Lead-Free — Yes

数据手册与资源

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