IR2101STRPBF vs IR2181STRPBF Comparison

Detailed side-by-side comparison of IR2101STRPBF by Infineon and IR2181STRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR2101STRPBF IR2181STRPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Configuration Half-Bridge (High-Side and Low-Side), Independent High and Low Side, Independent
Number of Drivers 2 —
Driver Type Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V and 5 V
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
Package 8-SOIC (0.154 inch, 3.90 mm Width) 8-SOIC (0.154", 3.90 mm width)
Mounting Type Surface Mount Surface Mount
Operating Temperature -40 C to +125 C —
MSL Level MSL 3 [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant (PBF suffix)
Input Type — Non-Inverting
Supply Voltage (VCC) — 10 V to 20 V
Output Current (Source) — 1.9 A peak
Output Current (Sink) — 2.3 A peak
High-Side Floating Supply Voltage (VBS) — Up to 600 V offset
Propagation Delay (typ) — 180 ns
Rise Time (typ) — [DATA_NEEDED: rise time]
Fall Time (typ) — [DATA_NEEDED: fall time]
dV/dt Immunity — Yes
Negative Transient Voltage Tolerance — Yes
Undervoltage Lockout — Independent for high-side and low-side
Operating Temperature Range — -40 C to +125 C
Lead-Free — Yes

Datasheets & Resources

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