IR2109SPBF vs IR2010SPBF 对比

详细并排对比 IR2109SPBF 出自 Infineon 和 IR2010SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IR2109SPBF IR2010SPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.05 $1.20
Driver Configuration Half-Bridge —
Number of Drivers 2 (high-side + low-side) 2 (independent high/low-side outputs)
High-Side Voltage Tolerance 600 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typical) 0.2 A —
Sink Current (typical) 0.35 A —
Turn-On Propagation Delay 150 ns —
Turn-Off Propagation Delay 150 ns —
上升时间 200 ns —
下降时间 50 ns —
Quiescent VCC Current 1 mA —
Input Logic Compatibility 3.3 V / 5 V CMOS / TTL —
Undervoltage Lockout Yes (VCC) —
Bootstrap Diode Integrated —
工作结温 -40 C to +150 C —
封装 SOIC-8 16-SOIC (SOIC-16)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant (Pb-free PBF suffix)
Configuration — Half-Bridge (high + low side)
Offset Voltage (max) — 200 V
Peak Source/Sink Current — 3 A / 3 A
Logic Input Compatibility — CMOS or LSTTL, down to 3.0 V
Propagation Delay (typ) — 95 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
VCC Supply Voltage (low side) — 10 V to 20 V
VB Bootstrap Supply (high side) — VCC + 10 V to VCC + 20 V
工作温度 — -40C to +150C
Shutdown Feature — Yes (active input)
MSL 等级 — [DATA_NEEDED: MSL rating]
Drive Technology — High-speed power MOSFET / IGBT driver
Channel Matching — Matched propagation delays for cross-conduction minimization

数据手册与资源

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