IRF3710STRLPBF vs IRF640NSTRLPBF 对比

详细并排对比 IRF3710STRLPBF 出自 Infineon 和 IRF640NSTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF640NSTRLPBF IRF640NSTRLPBF - 200V 18A N-Channel HEXFET MOSFET | Infineon

IRF640NSTRLPBF - 200V 18A N-Channel HEXFET MOSFET | Infineon

IRF640NSTRLPBF ✓ 量产中

规格对比

参数 IRF3710STRLPBF IRF640NSTRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.23 $0.89
FET Type N-Channel N-Channel
Technology HEXFET / IR MOSFET (planar) HEXFET (5th generation, trench MOSFET)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc=25 C) 57 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max 23 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
Total Gate Charge (Qg) 86.7 nC 44.7 nC
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation (PD, Tc=25 C) 200 W —
工作温度范围 -55 C to +175 C —
封装 D2PAK (TO-263), surface mount D2PAK (TO-263AB), surface mount, 3-pin (2+tab)
安装类型 Surface Mount Surface Mount (Tape and Reel)
RoHS 状态 Compliant (Pb-free) Compliant
Lead-Free Yes —
Tape & Reel Orientation TRL (left) —
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID, Tc=25C) — 18 A
Maximum Power Dissipation (PD, Tc=25C) — 150 W
On-Resistance (RDS(on)) at VGS=10V — 0.15 ohm
Gate-to-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
工作结温范围 — -55C to +175C
Lead-Free (PbF) — Yes

数据手册与资源

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