IRF4905STRLPBF vs IRF3710STRLPBF 对比

详细并排对比 IRF4905STRLPBF 出自 Infineon 和 IRF3710STRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF4905STRLPBF IRF3710STRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $1.23
FET Type P-Channel N-Channel
Drain-Source Voltage (VDS) -55 V 100 V
Continuous Drain Current (ID) at Tc=25C -74 A —
Pulsed Drain Current (IDM) -260 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
On-Resistance RDS(on) at VGS=-10V 20 mOhm —
Total Gate Charge (Qg) 120 nC 86.7 nC
Power Dissipation (PD) at Tc=25C 170 W —
工作温度范围 -55C to +175C -55 C to +175 C
封装 D2PAK (TO-263) D2PAK (TO-263), surface mount
安装类型 Surface Mount Surface Mount
Technology HEXFET (Planar) HEXFET / IR MOSFET (planar)
MSL 等级 1 —
RoHS 状态 Compliant Compliant (Pb-free)
Lead-Free Yes Yes
Continuous Drain Current (ID, Tc=25 C) — 57 A
On-Resistance RDS(on) max — 23 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc=25 C) — 200 W
Tape & Reel Orientation — TRL (left)

数据手册与资源

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