IRF530NSTRLPBF vs IRFZ44NPBF 对比
详细并排对比 IRF530NSTRLPBF 出自 Infineon 和 IRFZ44NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF530NSTRLPBF | IRFZ44NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.89 | $0.65 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 17 A | 49 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 90 mOhm | — |
| Total Gate Charge (Qg) | 24.7 nC | 42 nC |
| Power Dissipation (Pd) at Tc=25C | 70 W | — |
| Power Dissipation (Pd) at Ta=25C | 3.8 W | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Package Type | D2PAK (TO-263), 3-pin (2 + tab) | — |
| 安装类型 | Surface Mount | Through Hole |
| Technology | HEXFET (Planar Stripe Cell) | HEXFET (Advanced Process) |
| 工作温度范围 | -55C to +175C | — |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant | — |
| Qualification Market | Industrial | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 17.5 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 94 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 62 C/W |
| 工作结温 | — | -55C to +175C |
| 封装 | — | TO-220AB (3-pin + tab) |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS rating] |
| RoHS 状态 | — | Compliant |