IRF7343TRPBF vs IRF7351TRPBF 对比

详细并排对比 IRF7343TRPBF 出自 Infineon 和 IRF7351TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF7343TRPBF IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF ✓ 量产中

规格对比

参数 IRF7343TRPBF IRF7351TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.62 $0.68
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Status Active —
晶体管类型 N and P-Channel Complementary MOSFET Array —
Technology IR MOSFET (HEXFET Generation V) IR MOSFET (HEXFET trench)
Drain-to-Source Voltage (VDS) - N-Channel 55 V —
Drain-to-Source Voltage (VDS) - P-Channel 55 V —
Continuous Drain Current (ID) - N-Channel 4.7 A —
Continuous Drain Current (ID) - P-Channel 3.4 A —
On-Resistance (RDS(on)) - N-Channel 0.043 ohm (typical per chipdig.com) —
On-Resistance (RDS(on)) max 50 mOhm —
Power Dissipation (PD) 2 W 2 W
封装 8-SOIC (SO-8) 8-SO (SO-8 / SOIC-8) Surface Mount
安装类型 Surface Mount Surface Mount
Lead-Free Yes Yes
RoHS Compliance Compliant —
Part Number — IRF7351TRPBF
Configuration — Dual N-Channel MOSFET (Half-Bridge)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 8 A
On-Resistance RDS(on) max — 17.8 mOhm
On-Resistance RDS(on) typ (per digchips) — 0.0137 ohm (13.7 mOhm)
Total Gate Charge (Qg) — 24 nC
工作温度 — -55C to +150C (junction)
Typical Application — Synchronous Rectifier for Isolated DC-DC Converters
RoHS 状态 — Compliant (PBF suffix = lead-free)
MSL 等级 — [DATA_NEEDED: MSL Level]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]

数据手册与资源

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