IRF7343TRPBF vs IRF7351TRPBF Vergleich

Detaillierter Direktvergleich von IRF7343TRPBF von Infineon und IRF7351TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7343TRPBF IRF7351TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,62 $0,68
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Status Active —
Transistortyp N and P-Channel Complementary MOSFET Array —
Technology IR MOSFET (HEXFET Generation V) IR MOSFET (HEXFET trench)
Drain-to-Source Voltage (VDS) - N-Channel 55 V —
Drain-to-Source Voltage (VDS) - P-Channel 55 V —
Continuous Drain Current (ID) - N-Channel 4.7 A —
Continuous Drain Current (ID) - P-Channel 3.4 A —
On-Resistance (RDS(on)) - N-Channel 0.043 ohm (typical per chipdig.com) —
On-Resistance (RDS(on)) max 50 mOhm —
Power Dissipation (PD) 2 W 2 W
Gehäuse 8-SOIC (SO-8) 8-SO (SO-8 / SOIC-8) Surface Mount
Montageart Surface Mount Surface Mount
Lead-Free Yes Yes
RoHS Compliance Compliant —
Part Number — IRF7351TRPBF
Configuration — Dual N-Channel MOSFET (Half-Bridge)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 8 A
On-Resistance RDS(on) max — 17.8 mOhm
On-Resistance RDS(on) typ (per digchips) — 0.0137 ohm (13.7 mOhm)
Total Gate Charge (Qg) — 24 nC
Betriebstemperatur — -55C to +150C (junction)
Typical Application — Synchronous Rectifier for Isolated DC-DC Converters
RoHS-Status — Compliant (PBF suffix = lead-free)
MSL-Level — [DATA_NEEDED: MSL Level]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]

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