IRF7343TRPBF vs IRF7389TRPBF 对比

详细并排对比 IRF7343TRPBF 出自 Infineon 和 IRF7389TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF7343TRPBF IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF ✓ 量产中

规格对比

参数 IRF7343TRPBF IRF7389TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.62 $0.58
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon (formerly International Rectifier)
Part Status Active —
晶体管类型 N and P-Channel Complementary MOSFET Array —
Technology IR MOSFET (HEXFET Generation V) HEXFET Generation V (IR MOSFET)
Drain-to-Source Voltage (VDS) - N-Channel 55 V —
Drain-to-Source Voltage (VDS) - P-Channel 55 V —
Continuous Drain Current (ID) - N-Channel 4.7 A —
Continuous Drain Current (ID) - P-Channel 3.4 A —
On-Resistance (RDS(on)) - N-Channel 0.043 ohm (typical per chipdig.com) —
On-Resistance (RDS(on)) max 50 mOhm —
Power Dissipation (PD) 2 W —
封装 8-SOIC (SO-8) 8-SO (SOIC-8)
安装类型 Surface Mount Surface Mount
Lead-Free Yes —
RoHS Compliance Compliant —
Transistor Polarity — N and P Channel
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (N-Ch, Id) — 7.3 A
Continuous Drain Current (P-Ch, Id) — -5.3 A
On-Resistance RDS(on) Max — 29 mOhm
Power Dissipation (Pd) — 2.5 W
Configuration — Dual N+P Complementary Half-Bridge
工作温度 — -55C to +150C
Avalanche Rated — Yes
Lead Free / RoHS — Lead Free / RoHS Compliant
MSL 等级 — 1

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