IRF7343TRPBF vs IRF7389TRPBF Comparison

Detailed side-by-side comparison of IRF7343TRPBF by Infineon and IRF7389TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF7343TRPBF IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF βœ“ Active

Specification Comparison

Parameter IRF7343TRPBF IRF7389TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.58
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon (formerly International Rectifier)
Part Status Active β€”
Transistor Type N and P-Channel Complementary MOSFET Array β€”
Technology IR MOSFET (HEXFET Generation V) HEXFET Generation V (IR MOSFET)
Drain-to-Source Voltage (VDS) - N-Channel 55 V β€”
Drain-to-Source Voltage (VDS) - P-Channel 55 V β€”
Continuous Drain Current (ID) - N-Channel 4.7 A β€”
Continuous Drain Current (ID) - P-Channel 3.4 A β€”
On-Resistance (RDS(on)) - N-Channel 0.043 ohm (typical per chipdig.com) β€”
On-Resistance (RDS(on)) max 50 mOhm β€”
Power Dissipation (PD) 2 W β€”
Package 8-SOIC (SO-8) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
Lead-Free Yes β€”
RoHS Compliance Compliant β€”
Transistor Polarity β€” N and P Channel
Drain-Source Voltage (Vds) β€” 30 V
Continuous Drain Current (N-Ch, Id) β€” 7.3 A
Continuous Drain Current (P-Ch, Id) β€” -5.3 A
On-Resistance RDS(on) Max β€” 29 mOhm
Power Dissipation (Pd) β€” 2.5 W
Configuration β€” Dual N+P Complementary Half-Bridge
Operating Temperature β€” -55C to +150C
Avalanche Rated β€” Yes
Lead Free / RoHS β€” Lead Free / RoHS Compliant
MSL Level β€” 1

Datasheets & Resources

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