IRF7351TRPBF vs IRF7343TRPBF 对比
详细并排对比 IRF7351TRPBF 出自 Infineon 和 IRF7343TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7351TRPBF | IRF7343TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.68 | $0.62 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF7351TRPBF | — |
| Configuration | Dual N-Channel MOSFET (Half-Bridge) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 8 A | — |
| On-Resistance RDS(on) max | 17.8 mOhm | — |
| On-Resistance RDS(on) typ (per digchips) | 0.0137 ohm (13.7 mOhm) | — |
| Total Gate Charge (Qg) | 24 nC | — |
| Power Dissipation (PD) | 2 W | 2 W |
| Technology | IR MOSFET (HEXFET trench) | IR MOSFET (HEXFET Generation V) |
| 封装 | 8-SO (SO-8 / SOIC-8) Surface Mount | 8-SOIC (SO-8) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +150C (junction) | — |
| Typical Application | Synchronous Rectifier for Isolated DC-DC Converters | — |
| RoHS 状态 | Compliant (PBF suffix = lead-free) | — |
| Lead-Free | Yes | Yes |
| MSL 等级 | [DATA_NEEDED: MSL Level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Part Status | — | Active |
| 晶体管类型 | — | N and P-Channel Complementary MOSFET Array |
| Drain-to-Source Voltage (VDS) - N-Channel | — | 55 V |
| Drain-to-Source Voltage (VDS) - P-Channel | — | 55 V |
| Continuous Drain Current (ID) - N-Channel | — | 4.7 A |
| Continuous Drain Current (ID) - P-Channel | — | 3.4 A |
| On-Resistance (RDS(on)) - N-Channel | — | 0.043 ohm (typical per chipdig.com) |
| On-Resistance (RDS(on)) max | — | 50 mOhm |
| RoHS Compliance | — | Compliant |