IRF7351TRPBF vs IRF7343TRPBF Vergleich

Detaillierter Direktvergleich von IRF7351TRPBF von Infineon und IRF7343TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7351TRPBF IRF7343TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,68 $0,62
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF7351TRPBF —
Configuration Dual N-Channel MOSFET (Half-Bridge) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 8 A —
On-Resistance RDS(on) max 17.8 mOhm —
On-Resistance RDS(on) typ (per digchips) 0.0137 ohm (13.7 mOhm) —
Total Gate Charge (Qg) 24 nC —
Power Dissipation (PD) 2 W 2 W
Technology IR MOSFET (HEXFET trench) IR MOSFET (HEXFET Generation V)
Gehäuse 8-SO (SO-8 / SOIC-8) Surface Mount 8-SOIC (SO-8)
Montageart Surface Mount Surface Mount
Betriebstemperatur -55C to +150C (junction) —
Typical Application Synchronous Rectifier for Isolated DC-DC Converters —
RoHS-Status Compliant (PBF suffix = lead-free) —
Lead-Free Yes Yes
MSL-Level [DATA_NEEDED: MSL Level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
Part Status — Active
Transistortyp — N and P-Channel Complementary MOSFET Array
Drain-to-Source Voltage (VDS) - N-Channel — 55 V
Drain-to-Source Voltage (VDS) - P-Channel — 55 V
Continuous Drain Current (ID) - N-Channel — 4.7 A
Continuous Drain Current (ID) - P-Channel — 3.4 A
On-Resistance (RDS(on)) - N-Channel — 0.043 ohm (typical per chipdig.com)
On-Resistance (RDS(on)) max — 50 mOhm
RoHS Compliance — Compliant

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