IRF7416TRPBF vs IRLR9343TRPBF 对比

详细并排对比 IRF7416TRPBF 出自 Infineon 和 IRLR9343TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF7416TRPBF IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF ✓ 量产中
Infineon
IRLR9343TRPBF IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF ✓ 量产中

规格对比

参数 IRF7416TRPBF IRLR9343TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.32 $0.47
FET Type P-Channel P-Channel MOSFET
Technology HEXFET (IR MOSFET) IR HEXFET
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25C -10 A —
Pulsed Drain Current (IDM) -50 A [DATA_NEEDED: pulsed drain current rating]
Static Drain-to-Source On-Resistance (RDS(on)) max 20 mOhm at VGS = -10 V —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) -1 V to -3 V [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) 61 nC 31 nC (typical)
Power Dissipation (PD) max at TA=25C 2.5 W —
Thermal Resistance, Junction-to-Ambient (RthJA) 50 C/W —
工作结温范围 -55 C to +150 C —
封装 8-SO (SOIC-8) PG-TO252-3 (DPAK) Surface Mount
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
MSL 等级 1 (unlimited) 1
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLR9343TRPBF
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -20 A
On-Resistance RDS(on) max at VGS=-10V — 105 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: max VGS rating]
Power Dissipation (PD) at Tc=25C — 79 W
工作温度范围 — [DATA_NEEDED: Tj min/max operating range]
Optimized Application — Class-D audio amplifier output stages
Polarity — P-Channel

数据手册与资源

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