IRF7416TRPBF vs IRLR9343TRPBF 비교

다음의 상세 나란히 비교: IRF7416TRPBF 제조: Infineon 및 IRLR9343TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IRF7416TRPBF IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF ✓ 활성
Infineon
IRLR9343TRPBF IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF ✓ 활성

사양 비교

파라미터 IRF7416TRPBF IRLR9343TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.32 $0.47
FET Type P-Channel P-Channel MOSFET
Technology HEXFET (IR MOSFET) IR HEXFET
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25C -10 A —
Pulsed Drain Current (IDM) -50 A [DATA_NEEDED: pulsed drain current rating]
Static Drain-to-Source On-Resistance (RDS(on)) max 20 mOhm at VGS = -10 V —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) -1 V to -3 V [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) 61 nC 31 nC (typical)
Power Dissipation (PD) max at TA=25C 2.5 W —
Thermal Resistance, Junction-to-Ambient (RthJA) 50 C/W —
동작 접합 온도 범위 -55 C to +150 C —
패키지 8-SO (SOIC-8) PG-TO252-3 (DPAK) Surface Mount
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant Compliant
Lead-Free Yes Yes
MSL 레벨 1 (unlimited) 1
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLR9343TRPBF
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -20 A
On-Resistance RDS(on) max at VGS=-10V — 105 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: max VGS rating]
Power Dissipation (PD) at Tc=25C — 79 W
동작 온도 범위 — [DATA_NEEDED: Tj min/max operating range]
Optimized Application — Class-D audio amplifier output stages
Polarity — P-Channel

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