IRF7832TRPBF vs IRF8736PBF 对比
详细并排对比 IRF7832TRPBF 出自 Infineon 和 IRF8736PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7832TRPBF | IRF8736PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.45 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7832TRPBF | — |
| FET Type | N-Channel | — |
| Technology | HEXFET (trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 4.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typical | 1.0 V to 2.5 V | — |
| Total Gate Charge (Qg) typical | 34 nC | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 工作温度范围 | -55 C to +150 C (TJ) | -55°C to +150°C (junction) |
| 封装 | 8-SO (SOIC-8) | SO-8 (8-SO) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 (Unlimited) |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TA=70°C | — | [DATA_NEEDED: ID at TA=70°C] |
| On-Resistance RDS(on) at VGS=10V | — | 4.8 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | — | 6.0 mΩ (typical) |
| Gate-Source Threshold Voltage VGS(th) | — | Logic-level (optimized for 5 V drive) |
| Total Gate Charge Qg | — | 17 nC (typical) |
| Maximum Power Dissipation at TA=25°C | — | 2.5 W |
| RoHS / Lead-Free | — | Lead-Free, RoHS3 Compliant |
| Qualification Standard | — | JEDEC |
| Avalanche Rated | — | Yes (fully characterized avalanche voltage and current) |