IRF7832TRPBF vs IRF8736PBF Vergleich

Detaillierter Direktvergleich von IRF7832TRPBF von Infineon und IRF8736PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7832TRPBF IRF8736PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,92 $0,45
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7832TRPBF —
FET Type N-Channel —
Technology HEXFET (trench MOSFET) —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 4.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typical 1.0 V to 2.5 V —
Total Gate Charge (Qg) typical 34 nC —
Power Dissipation (PD) at TA=25C 2.5 W —
Betriebstemperaturbereich -55 C to +150 C (TJ) -55°C to +150°C (junction)
Gehäuse 8-SO (SOIC-8) SO-8 (8-SO)
Montageart Surface Mount Surface Mount
MSL-Level 1 (per JEDEC J-STD-020) 1 (Unlimited)
RoHS-Status Compliant —
Lead-Free Yes —
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TA=70°C — [DATA_NEEDED: ID at TA=70°C]
On-Resistance RDS(on) at VGS=10V — 4.8 mΩ
On-Resistance RDS(on) at VGS=4.5V — 6.0 mΩ (typical)
Gate-Source Threshold Voltage VGS(th) — Logic-level (optimized for 5 V drive)
Total Gate Charge Qg — 17 nC (typical)
Maximum Power Dissipation at TA=25°C — 2.5 W
RoHS / Lead-Free — Lead-Free, RoHS3 Compliant
Qualification Standard — JEDEC
Avalanche Rated — Yes (fully characterized avalanche voltage and current)

Datenblätter & Ressourcen

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