IRF8714TRPBF vs IRLL024NTRPBF 对比

详细并排对比 IRF8714TRPBF 出自 Infineon 和 IRLL024NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF8714TRPBF IRLL024NTRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.66 $0.22
FET Type N-Channel MOSFET, Metal Oxide
Technology HEXFET / StrongIRFET (planar MOSFET) HEXFET Power MOSFET
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 14 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 4.4 A
On-State Resistance (RDS(on)) max at VGS=10V 8.7 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical range] Logic Level (5 V drive capable)
Gate Charge (Qg) typical 8.1 nC —
Gate-Source Voltage (VGS) max ±20 V —
Power Dissipation (PD) at TA=25C 2.5 W —
工作温度范围 -55C to +150C (junction) —
封装 SO-8 (8-SOIC) SOT-223 (4-pin)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Avalanche Rated Yes —
Lead-Free / RoHS Lead-Free / RoHS Compliant —
MSL 等级 1 (per Infineon package qualification) —
Polarity — N-Channel
Operating Mode — Enhancement Mode
V(BR)DSS (Drain-Source Breakdown Voltage) — 55 V
Continuous Drain Current (ID) at Ta — 3.1 A
Static Drain-Source On-Resistance (RDS(on)) — 0.065 ohm
Total Gate Charge (Qg) — 10.4 nC
Maximum Power Dissipation (Pd) at Ta — 1.0 W
Maximum Operating Junction Temperature — 175 C
RoHS 状态 — Compliant

数据手册与资源

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