IRF9530NSTRLPBF vs IRF9530NPBF 对比
详细并排对比 IRF9530NSTRLPBF 出自 Infineon 和 IRF9530NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF9530NSTRLPBF | IRF9530NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $0.65 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -100 V |
| Continuous Drain Current (ID) at TC=25C | -14 A | — |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mOhm | 200 mΩ |
| Total Gate Charge (Qg) | 38.7 nC (typ) | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) range] | — |
| Power Dissition (PD) at TC=25C | 79 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Thermal Resistance Theta_JC | 1.5 C/W (typ) | — |
| 工作温度范围 | -55C to +150C (TJ) | — |
| 封装 | D2PAK (TO-263-3) | TO-220AB (through-hole) |
| 安装类型 | Surface Mount | Through Hole |
| Lead-Free / RoHS | Yes (Pb-free suffix) | — |
| Technology | HEXFET (Planar DMOS) | — |
| Avalanche Rated | [DATA_NEEDED: EAS rating] | — |
| Continuous Drain Current (ID) at TC=25°C | — | -14 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) typ | — | 38.7 nC |
| Maximum Power Dissition at TC=25°C | — | 79 W |
| 工作结温 | — | -55°C to +175°C |
| Mounting Screw Torque (max) | — | [DATA_NEEDED: maximum torque] |
| Avalanche Rating | — | Repetitive avalanche rated |
| dv/dt Rating | — | Dynamic dV/dt rated |
| Lead-Free / RoHS Status | — | Lead-Free (PBF suffix), RoHS compliant |