IRFB7534PBF vs IRFB52N15DPBF 对比
详细并排对比 IRFB7534PBF 出自 Infineon 和 IRFB52N15DPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFB7534PBF | IRFB52N15DPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.85 | $1.65 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFB7534PBF | — |
| Technology | StrongIRFET™ (planar N-channel) | HEXFET (vertical DMOS, hexagonal cell) |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 195 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Power Dissipation (PD) at Tc=25C | 294 W | — |
| On-Resistance RDS(on) max at VGS=10V | 2.4 mOhm | — |
| Gate Threshold Voltage VGS(th) | 3.7 V (typ) | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy Rated | Yes | — |
| 封装 | TO-220AB | — |
| 安装类型 | Through Hole | Through Hole |
| 工作温度范围 | -55C to +175C | — |
| RoHS 状态 | Compliant (PbF suffix) | Compliant |
| MSL 等级 | MSL1 (unlimited floor life) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 51 A |
| Pulsed Drain Current (IDM) | — | 204 A |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Static Drain-Source On-Resistance (RDS(on)) | — | 32 mOhm at VGS=10V |
| Total Gate Charge (Qg) | — | 60 nC (typical) |
| Power Dissipation (PD) at TC=25C | — | 230 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| 工作结温 | — | -55 C to +175 C |
| Package Type | — | TO-220AB (through-hole) |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Lead-Free Finish | — | Yes (Pb-free PBF suffix) |
| Qualification Standard | — | Industrial market (per IR/Infineon) |