IRFB7534PBF vs IRFB52N15DPBF 비교
다음의 상세 나란히 비교: IRFB7534PBF 제조: Infineon 및 IRFB52N15DPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFB7534PBF | IRFB52N15DPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.85 | $1.65 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFB7534PBF | — |
| Technology | StrongIRFET™ (planar N-channel) | HEXFET (vertical DMOS, hexagonal cell) |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 195 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Power Dissipation (PD) at Tc=25C | 294 W | — |
| On-Resistance RDS(on) max at VGS=10V | 2.4 mOhm | — |
| Gate Threshold Voltage VGS(th) | 3.7 V (typ) | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy Rated | Yes | — |
| 패키지 | TO-220AB | — |
| 실장 유형 | Through Hole | Through Hole |
| 동작 온도 범위 | -55C to +175C | — |
| RoHS 상태 | Compliant (PbF suffix) | Compliant |
| MSL 레벨 | MSL1 (unlimited floor life) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 51 A |
| Pulsed Drain Current (IDM) | — | 204 A |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Static Drain-Source On-Resistance (RDS(on)) | — | 32 mOhm at VGS=10V |
| Total Gate Charge (Qg) | — | 60 nC (typical) |
| Power Dissipation (PD) at TC=25C | — | 230 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| 동작 접합 온도 | — | -55 C to +175 C |
| Package Type | — | TO-220AB (through-hole) |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Lead-Free Finish | — | Yes (Pb-free PBF suffix) |
| Qualification Standard | — | Industrial market (per IR/Infineon) |