IRFB7534PBF vs IRFB52N15DPBF Comparison

Detailed side-by-side comparison of IRFB7534PBF by Infineon and IRFB52N15DPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB7534PBF IRFB52N15DPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.85 $1.65
Manufacturer Infineon Technologies β€”
Part Number IRFB7534PBF β€”
Technology StrongIRFETβ„’ (planar N-channel) HEXFET (vertical DMOS, hexagonal cell)
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) max 60 V β€”
Continuous Drain Current (ID) at Tc=25C 195 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Power Dissipation (PD) at Tc=25C 294 W β€”
On-Resistance RDS(on) max at VGS=10V 2.4 mOhm β€”
Gate Threshold Voltage VGS(th) 3.7 V (typ) β€”
Gate Charge Qg [DATA_NEEDED: total gate charge] β€”
Avalanche Energy Rated Yes β€”
Package TO-220AB β€”
Mounting Type Through Hole Through Hole
Operating Temperature Range -55C to +175C β€”
RoHS Status Compliant (PbF suffix) Compliant
MSL Level MSL1 (unlimited floor life) β€”
Drain-Source Voltage (V(BR)DSS) β€” 150 V
Continuous Drain Current (ID) at TC=25C β€” 51 A
Pulsed Drain Current (IDM) β€” 204 A
Gate Threshold Voltage (VGS(th)) β€” 2.0 V to 4.0 V
Static Drain-Source On-Resistance (RDS(on)) β€” 32 mOhm at VGS=10V
Total Gate Charge (Qg) β€” 60 nC (typical)
Power Dissipation (PD) at TC=25C β€” 230 W
Power Dissipation (PD) at TA=25C β€” 3.8 W
Operating Junction Temperature β€” -55 C to +175 C
Package Type β€” TO-220AB (through-hole)
Polarity / Channel Type β€” N-Channel Enhancement Mode
Lead-Free Finish β€” Yes (Pb-free PBF suffix)
Qualification Standard β€” Industrial market (per IR/Infineon)

Datasheets & Resources

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