IRFB7545PBF vs IRL2910STRLPBF 对比

详细并排对比 IRFB7545PBF 出自 Infineon 和 IRL2910STRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFB7545PBF IRL2910STRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $0.98
Manufacturer Infineon Technologies —
Part Number IRFB7545PBF —
Technology StrongIRFET™ (HEXFET, N-Channel) HEXFET (Infineon/IR)
Polarity N-Channel —
VDS (Drain-Source Voltage) max 60 V —
VGS (Gate-Source Voltage) max ±20 V —
RDS(on) max at VGS=10V 5.9 mOhm —
Continuous Drain Current (ID) at Tc=25C 95 A —
Pulsed Drain Current (IDM) 380 A [DATA_NEEDED: pulsed drain current]
Single-Pulse Avalanche Current (IAS) 57 A —
Power Dissipation (PD) at Tc=25C 125 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
工作结温 -55C to +175C —
封装 TO-220AB (Through-Hole) D2PAK (TO-263) Surface Mount
安装类型 Through Hole (THT) Surface Mount
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) —
MSL 等级 N/A (Through-Hole) —
Gate Drive Voltage (typical) 10 V —
Avalanche Energy Rated Yes —
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ TC=25C — 55 A
On-Resistance Rds(on) max @ VGS=10V — 26 mOhm
Gate Threshold Voltage VGS(th) typ — Logic-level (1V-2V)
Total Gate Charge (Qg) — 93.3 nC
Power Dissipation @ TA=25C — 3.8 W
Power Dissipation @ TC=25C — 200 W
工作温度范围 — -55C to +175C (TJ)
RoHS 状态 — Compliant
无卤 — Compliant (per GlobalSpec)

数据手册与资源

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