IRFB7545PBF vs IRL2910STRLPBF Comparison

Detailed side-by-side comparison of IRFB7545PBF by Infineon and IRL2910STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB7545PBF IRL2910STRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $0.98
Manufacturer Infineon Technologies β€”
Part Number IRFB7545PBF β€”
Technology StrongIRFETβ„’ (HEXFET, N-Channel) HEXFET (Infineon/IR)
Polarity N-Channel β€”
VDS (Drain-Source Voltage) max 60 V β€”
VGS (Gate-Source Voltage) max Β±20 V β€”
RDS(on) max at VGS=10V 5.9 mOhm β€”
Continuous Drain Current (ID) at Tc=25C 95 A β€”
Pulsed Drain Current (IDM) 380 A [DATA_NEEDED: pulsed drain current]
Single-Pulse Avalanche Current (IAS) 57 A β€”
Power Dissipation (PD) at Tc=25C 125 W β€”
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-220AB (Through-Hole) D2PAK (TO-263) Surface Mount
Mounting Type Through Hole (THT) Surface Mount
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) β€”
MSL Level N/A (Through-Hole) β€”
Gate Drive Voltage (typical) 10 V β€”
Avalanche Energy Rated Yes β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) @ TC=25C β€” 55 A
On-Resistance Rds(on) max @ VGS=10V β€” 26 mOhm
Gate Threshold Voltage VGS(th) typ β€” Logic-level (1V-2V)
Total Gate Charge (Qg) β€” 93.3 nC
Power Dissipation @ TA=25C β€” 3.8 W
Power Dissipation @ TC=25C β€” 200 W
Operating Temperature Range β€” -55C to +175C (TJ)
RoHS Status β€” Compliant
Halogen Free β€” Compliant (per GlobalSpec)

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