IRFP250MPBF vs IRF150P220AKMA1 对比

详细并排对比 IRFP250MPBF 出自 Infineon 和 IRF150P220AKMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFP250MPBF IRF150P220AKMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.55 $3.55
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFP250MPBF IRF150P220AKMA1
晶体管类型 N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) StrongIRFET
Drain-Source Voltage (Vds) 200 V —
Continuous Drain Current (Id) at Tc=25C 30 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) —
Total Gate Charge (Qg) 82 nC —
Power Dissipation (Pd) at Tc=25C 214 W 556 W
工作结温 -55C to +175C —
封装 / 外壳 TO-247AC (3-pin + tab) —
安装类型 Through Hole Through Hole
引脚数 3 —
Avalanche Rated Yes —
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
MSL 等级 1 (unlimited) —
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID) at Tc=25C — 203 A
On-Resistance (RDS(on) max) at VGS=10V — 2.7 mOhm
Gate-Source Voltage (VGS max) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (Pd) at Ta=25C — 3.8 W
工作温度范围 — -55C to +175C
封装 — TO-247-3 (PG-TO247-3)
Terminal Finish — Tin (Sn)
JESD-609 Code — e3

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