IRFP250MPBF vs IRFP250N 对比
详细并排对比 IRFP250MPBF 出自 Infineon 和 IRFP250N 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IRFP250N - 200V 30A N-Channel HEXFET MOSFET | Infineon (Lead-Free (Pb-Free))
IRFP250N ✓ 量产中规格对比
| 参数 | IRFP250MPBF | IRFP250N |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.55 | $1.78 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFP250MPBF | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | N-Channel HEXFET Power MOSFET (Fifth Generation) |
| Drain-Source Voltage (Vds) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 75 mOhm max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 4 V (typ) | — |
| Total Gate Charge (Qg) | 82 nC | — |
| Power Dissipation (Pd) at Tc=25C | 214 W | — |
| 工作结温 | -55C to +175C | — |
| 封装 / 外壳 | TO-247AC (3-pin + tab) | — |
| 安装类型 | Through Hole | Through Hole |
| 引脚数 | 3 | — |
| Avalanche Rated | Yes | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等级 | 1 (unlimited) | — |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC | — | 214 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/range] |
| 封装 | — | TO-247AC (through-hole) |
| 工作温度范围 | — | -55 C to +175 C (TJ) |
| Avalanche Energy Rating | — | Fully avalanche rated |
| dv/dt Rating | — | Dynamic dv/dt rated |
| Switching Frequency Optimization | — | Optimized for applications below 100 kHz |
| Qualification Standard | — | JEDEC |
| Lead-Free Status | — | Yes (PBF suffix) |
| Planar Cell Structure | — | Yes (wide SOA) |