IRFP250MPBF vs IRFP250N Vergleich
Detaillierter Direktvergleich von IRFP250MPBF von Infineon und IRFP250N von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IRFP250N - 200V 30A N-Channel HEXFET MOSFET | Infineon (Lead-Free (Pb-Free))
IRFP250N ✓ AktivSpezifikationsvergleich
| Parameter | IRFP250MPBF | IRFP250N |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,55 | $1,78 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFP250MPBF | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | N-Channel HEXFET Power MOSFET (Fifth Generation) |
| Drain-Source Voltage (Vds) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 75 mOhm max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 4 V (typ) | — |
| Total Gate Charge (Qg) | 82 nC | — |
| Power Dissipation (Pd) at Tc=25C | 214 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse / Bauform | TO-247AC (3-pin + tab) | — |
| Montageart | Through Hole | Through Hole |
| Anzahl der Pins | 3 | — |
| Avalanche Rated | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | 1 (unlimited) | — |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC | — | 214 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Gehäuse | — | TO-247AC (through-hole) |
| Betriebstemperaturbereich | — | -55 C to +175 C (TJ) |
| Avalanche Energy Rating | — | Fully avalanche rated |
| dv/dt Rating | — | Dynamic dv/dt rated |
| Switching Frequency Optimization | — | Optimized for applications below 100 kHz |
| Qualification Standard | — | JEDEC |
| Lead-Free Status | — | Yes (PBF suffix) |
| Planar Cell Structure | — | Yes (wide SOA) |