IRFP250MPBF vs IRFP250N Comparación
Comparación detallada lado a lado de IRFP250MPBF por Infineon y IRFP250N por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IRFP250N - 200V 30A N-Channel HEXFET MOSFET | Infineon (Lead-Free (Pb-Free))
IRFP250N ✓ ActivoComparación de especificaciones
| Parámetro | IRFP250MPBF | IRFP250N |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,55 | $1,78 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFP250MPBF | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | N-Channel HEXFET Power MOSFET (Fifth Generation) |
| Drain-Source Voltage (Vds) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 75 mOhm max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 4 V (typ) | — |
| Total Gate Charge (Qg) | 82 nC | — |
| Power Dissipation (Pd) at Tc=25C | 214 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado / Carcasa | TO-247AC (3-pin + tab) | — |
| Tipo de montaje | Through Hole | Through Hole |
| Número de pines | 3 | — |
| Avalanche Rated | Yes | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nivel MSL | 1 (unlimited) | — |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC | — | 214 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Encapsulado | — | TO-247AC (through-hole) |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C (TJ) |
| Avalanche Energy Rating | — | Fully avalanche rated |
| dv/dt Rating | — | Dynamic dv/dt rated |
| Switching Frequency Optimization | — | Optimized for applications below 100 kHz |
| Qualification Standard | — | JEDEC |
| Lead-Free Status | — | Yes (PBF suffix) |
| Planar Cell Structure | — | Yes (wide SOA) |