IRFP2907PBF vs IRF150P220AKMA1 对比

详细并排对比 IRFP2907PBF 出自 Infineon 和 IRF150P220AKMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFP2907PBF IRF150P220AKMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.45 $3.55
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFP2907PBF IRF150P220AKMA1
Technology HEXFET Stripe Planar DMOS (N-Channel) StrongIRFET
Drain-to-Source Voltage (V_DSS) 75 V —
Continuous Drain Current (I_D) at T_C = 25 C 209 A —
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V —
Power Dissipation (P_D) at T_C = 25 C 470 W —
Total Gate Charge (Q_g) 410 nC —
Maximum Junction Operating Temperature +175 C —
Package / Mounting Type TO-247AC (Through Hole) —
引脚数量 3 (Gate, Drain, Source) —
RoHS Compliance Yes (Pb-free) —
Avalanche Rated Yes (repetitive avalanche rated) —
Body Diode Integral (no external anti-parallel diode required) —
Lead-Free Yes Yes
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID) at Tc=25C — 203 A
On-Resistance (RDS(on) max) at VGS=10V — 2.7 mOhm
Gate-Source Voltage (VGS max) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (Pd) at Tc=25C — 556 W
Power Dissipation (Pd) at Ta=25C — 3.8 W
工作温度范围 — -55C to +175C
封装 — TO-247-3 (PG-TO247-3)
安装类型 — Through Hole
Terminal Finish — Tin (Sn)
JESD-609 Code — e3
RoHS 状态 — Compliant

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