IRFP2907PBF vs IRF150P220AKMA1 비교
다음의 상세 나란히 비교: IRFP2907PBF 제조: Infineon 및 IRF150P220AKMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFP2907PBF | IRF150P220AKMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.45 | $3.55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFP2907PBF | IRF150P220AKMA1 |
| Technology | HEXFET Stripe Planar DMOS (N-Channel) | StrongIRFET |
| Drain-to-Source Voltage (V_DSS) | 75 V | — |
| Continuous Drain Current (I_D) at T_C = 25 C | 209 A | — |
| Static Drain-to-Source On-Resistance (R_DS(on)) | 4.5 mOhm at V_GS = 10 V | — |
| Power Dissipation (P_D) at T_C = 25 C | 470 W | — |
| Total Gate Charge (Q_g) | 410 nC | — |
| Maximum Junction Operating Temperature | +175 C | — |
| Package / Mounting Type | TO-247AC (Through Hole) | — |
| 핀 수 | 3 (Gate, Drain, Source) | — |
| RoHS Compliance | Yes (Pb-free) | — |
| Avalanche Rated | Yes (repetitive avalanche rated) | — |
| Body Diode | Integral (no external anti-parallel diode required) | — |
| Lead-Free | Yes | Yes |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS max) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 203 A |
| On-Resistance (RDS(on) max) at VGS=10V | — | 2.7 mOhm |
| Gate-Source Voltage (VGS max) | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (Pd) at Tc=25C | — | 556 W |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| 동작 온도 범위 | — | -55C to +175C |
| 패키지 | — | TO-247-3 (PG-TO247-3) |
| 실장 유형 | — | Through Hole |
| Terminal Finish | — | Tin (Sn) |
| JESD-609 Code | — | e3 |
| RoHS 상태 | — | Compliant |