IRFR1205TRPBF vs BSP88H6327XTSA1 对比

详细并排对比 IRFR1205TRPBF 出自 Infineon 和 BSP88H6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSP88H6327XTSA1 BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 ✓ 量产中

规格对比

参数 IRFR1205TRPBF BSP88H6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.49 $0.21
FET Type N-Channel —
Technology HEXFET (IR MOSFET, 5th generation) SIPMOS (planar enhancement mode)
Drain-Source Voltage (VDS) 55 V 240 V
Continuous Drain Current (ID) at TC=25C 44 A —
Pulsed Drain Current (IDM) 160 A —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max [DATA_NEEDED: VGS(th) min/typ/max]
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C 107 W —
工作结温 -55C to +175C —
封装 TO-252AA (DPAK) PG-SOT223-4 (SOT-223-3)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (PBF suffix = lead-free) —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID) — 350 mA at Ta=25 C
Power Dissipation (PD) — 1.8 W at Ta=25 C
On-State Resistance (RDS(on)) — 6 ohm typical at VGS=10 V
Configuration — Single
工作温度 — -55 C to +150 C
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
RoHS Compliance — Compliant
MSL 等级 — [DATA_NEEDED: MSL level]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Drain Tab Connection — SOT-223 tab is drain

数据手册与资源

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