IRFR1205TRPBF vs IRFR2405TRPBF 对比

详细并排对比 IRFR1205TRPBF 出自 Infineon 和 IRFR2405TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF ✓ 量产中

规格对比

参数 IRFR1205TRPBF IRFR2405TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.49 $0.61
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET, 5th generation) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at TC=25C 44 A —
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max +/- 20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC 70 nC
Power Dissition (PD) at TC=25C 107 W —
工作结温 -55C to +175C -55C to +175C
封装 TO-252AA (DPAK) TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (PBF suffix = lead-free) Compliant (Lead-Free PBF suffix)
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
Manufacturer — Infineon Technologies
Part Status — Active
Continuous Drain Current (ID) at Tc=25C — 56 A
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
引脚数量 — 3 (Gate, Drain, Source) + Tab
MSL 等级 — 1
无卤 — [DATA_NEEDED: halogen-free status]
Avalanche Rated — Yes (100% avalanche tested)

数据手册与资源

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