IRFR1205TRPBF vs IRFR2405TRPBF Comparison

Detailed side-by-side comparison of IRFR1205TRPBF by Infineon and IRFR2405TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF βœ“ Active

Specification Comparison

Parameter IRFR1205TRPBF IRFR2405TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.61
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET, 5th generation) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at TC=25C 44 A β€”
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max +/- 20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) at VGS=10V 27 mOhm max β€”
Total Gate Charge (Qg) 43.3 nC 70 nC
Power Dissition (PD) at TC=25C 107 W β€”
Operating Junction Temperature -55C to +175C -55C to +175C
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (PBF suffix = lead-free) Compliant (Lead-Free PBF suffix)
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] β€”
Manufacturer β€” Infineon Technologies
Part Status β€” Active
Continuous Drain Current (ID) at Tc=25C β€” 56 A
On-Resistance RDS(on) max at VGS=10V β€” 16 mOhm
On-Resistance RDS(on) max at VGS=5V β€” [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C β€” 110 W
Pin Count β€” 3 (Gate, Drain, Source) + Tab
MSL Level β€” 1
Halogen-Free β€” [DATA_NEEDED: halogen-free status]
Avalanche Rated β€” Yes (100% avalanche tested)

Datasheets & Resources

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