IRFR3710ZTRPBF vs IRLR3410TRLPBF 对比

详细并排对比 IRFR3710ZTRPBF 出自 Infineon 和 IRLR3410TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF ✓ 量产中
Infineon
IRLR3410TRLPBF IRLR3410TRLPBF - 100V 17A N-Channel HEXFET MOSFET | Infineon

IRLR3410TRLPBF - 100V 17A N-Channel HEXFET MOSFET | Infineon

IRLR3410TRLPBF ✓ 量产中

规格对比

参数 IRFR3710ZTRPBF IRLR3410TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.42 $0.65
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 56 A 17 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] 60 A
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W 79 W
工作结温 -55C to +175C -55C to +175C
Technology HEXFET (IR MOSFET) HEXFET (5th generation) N-Channel MOSFET
封装 TO-252AA (DPAK) TO-252AA (DPAK), surface mount
安装类型 Surface Mount Surface Mount (tape and reel)
RoHS 状态 Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLR3410TRLPBF
On-Resistance RDS(on) max @ VGS=10V — 105 mOhm
On-Resistance RDS(on) max @ VGS=5V — [DATA_NEEDED: RDS(on) @ VGS=5V]
Gate-Source Threshold VGS(th) typ — 2.0 V
Total Gate Charge (Qg) — 22.7 nC
Gate Drive Level — Logic level (5V capable)
RoHS Compliance — Compliant (Pb-free)
MSL 等级 — 1
Avalanche Rated — Yes (UIS tested)

数据手册与资源

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