IRFR3710ZTRPBF vs IRLR3410TRLPBF Comparison

Detailed side-by-side comparison of IRFR3710ZTRPBF by Infineon and IRLR3410TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR3710ZTRPBF IRLR3410TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 56 A 17 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] 60 A
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W 79 W
Operating Junction Temperature -55C to +175C -55C to +175C
Technology HEXFET (IR MOSFET) HEXFET (5th generation) N-Channel MOSFET
Package TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount (tape and reel)
RoHS Status Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLR3410TRLPBF
On-Resistance RDS(on) max @ VGS=10V — 105 mOhm
On-Resistance RDS(on) max @ VGS=5V — [DATA_NEEDED: RDS(on) @ VGS=5V]
Gate-Source Threshold VGS(th) typ — 2.0 V
Total Gate Charge (Qg) — 22.7 nC
Gate Drive Level — Logic level (5V capable)
RoHS Compliance — Compliant (Pb-free)
MSL Level — 1
Avalanche Rated — Yes (UIS tested)

Datasheets & Resources

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