IRFR6215TRLPBF vs IRFR5505TRPBF 对比
详细并排对比 IRFR6215TRLPBF 出自 Infineon 和 IRFR5505TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR6215TRLPBF | IRFR5505TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.48 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -150 V | — |
| Continuous Drain Current (ID) at Tc=25C | -13 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | -72 A |
| Gate-Source Voltage (VGS) max | ±20 V | +/-20 V |
| RDS(on) max at VGS=-10V | 580 mOhm | — |
| Total Gate Charge (Qg) typ | 44 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| 封装 | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET (Fifth Generation) | IR MOSFET (HEXFET 5th generation) |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | Compliant (PBF suffix) |
| Lead-Free | Yes | Yes (PBF suffix) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -18 A |
| On-Resistance RDS(on) max at VGS=-10V | — | 110 mOhm |
| Total Gate Charge (Qg) | — | 21.3 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Rise Time (tr) | — | [DATA_NEEDED: tr] |
| Fall Time (tf) | — | [DATA_NEEDED: tf] |
| Maximum Power Dissipation (PD) at TC=25C | — | 57 W |
| 工作结温 | — | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | — | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 50 C/W (typical, DPAK on 1 oz copper) |