IRFR6215TRLPBF vs IRFR5505TRPBF Comparison

Detailed side-by-side comparison of IRFR6215TRLPBF by Infineon and IRFR5505TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR5505TRPBF IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF βœ“ Active

Specification Comparison

Parameter IRFR6215TRLPBF IRFR5505TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.48
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -150 V β€”
Continuous Drain Current (ID) at Tc=25C -13 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] -72 A
Gate-Source Voltage (VGS) max Β±20 V +/-20 V
RDS(on) max at VGS=-10V 580 mOhm β€”
Total Gate Charge (Qg) typ 44 nC β€”
Power Dissipation (PD) at Tc=25C 110 W β€”
Maximum Operating Junction Temperature 175 C β€”
Package TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Technology HEXFET Power MOSFET (Fifth Generation) IR MOSFET (HEXFET 5th generation)
MSL Level 1 β€”
RoHS Status Compliant Compliant (PBF suffix)
Lead-Free Yes Yes (PBF suffix)
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Series β€” HEXFET
Drain-Source Voltage (VDS) max β€” -55 V
Continuous Drain Current (ID) at TC=25C β€” -18 A
On-Resistance RDS(on) max at VGS=-10V β€” 110 mOhm
Total Gate Charge (Qg) β€” 21.3 nC
Gate-Source Charge (Qgs) β€” [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss]
Rise Time (tr) β€” [DATA_NEEDED: tr]
Fall Time (tf) β€” [DATA_NEEDED: tf]
Maximum Power Dissipation (PD) at TC=25C β€” 57 W
Operating Junction Temperature β€” -55 C to +175 C
Thermal Resistance Junction-to-Case (RthJC) β€” 2.2 C/W
Thermal Resistance Junction-to-Ambient (RthJA) β€” 50 C/W (typical, DPAK on 1 oz copper)

Datasheets & Resources

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