IRFR6215TRLPBF vs IRFR6215TRPBF 对比

详细并排对比 IRFR6215TRLPBF 出自 Infineon 和 IRFR6215TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR6215TRLPBF IRFR6215TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.38 $0.65
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -150 V -150 V
Continuous Drain Current (ID) at Tc=25C -13 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 580 mOhm —
Total Gate Charge (Qg) typ 44 nC —
Power Dissipation (PD) at Tc=25C 110 W —
Maximum Operating Junction Temperature 175 C —
封装 TO-252AA (DPAK) TO-252AA (DPAK), surface mount
安装类型 Surface Mount Surface Mount
Technology HEXFET Power MOSFET (Fifth Generation) HEXFET (5th generation IR MOSFET)
MSL 等级 1 MSL1
RoHS 状态 Compliant Compliant (Lead-Free PBF suffix)
Lead-Free Yes —
Continuous Drain Current (ID, Tc=25C) — -13 A
Power Dissipation (PD, Tc=25C) — 110 W
On-Resistance (RDS(on) max) — 0.295 ohm at VGS = -10 V
Gate-Source Voltage (VGS max) — [DATA_NEEDED: gate-source voltage rating]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — 44 nC
工作温度范围 — -55C to +175C
REACH Status — Compliant
Manufacturer — Infineon (formerly International Rectifier)

数据手册与资源

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