IRFR9024NTRLPBF vs IRFR5505TRPBF 对比

详细并排对比 IRFR9024NTRLPBF 出自 Infineon 和 IRFR5505TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF ✓ 量产中
Infineon
IRFR5505TRPBF IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF ✓ 量产中

规格对比

参数 IRFR9024NTRLPBF IRFR5505TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.32 $0.48
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC=25C -11 A -18 A
On-Resistance RDS(on) max at VGS=-10V 175 mOhm 110 mOhm
Gate-Source Voltage (VGS) max +/-20 V +/-20 V
Power Dissipation (PD) at TC=25C 38 W —
Gate Charge (Qg) typical 12.7 nC —
Package Type TO-252AA (DPAK) —
安装类型 Surface Mount Surface Mount
引脚数量 3 (Drain, Gate, Source + Tab) —
Technology HEXFET (Generation 5) IR MOSFET (HEXFET 5th generation)
工作温度范围 -55C to +175C —
Lead-Free / RoHS Yes (LPBF suffix) —
Reel Orientation Left (TRL suffix) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Series — HEXFET
Drain-Source Voltage (VDS) max — -55 V
Pulsed Drain Current (IDM) — -72 A
Total Gate Charge (Qg) — 21.3 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Rise Time (tr) — [DATA_NEEDED: tr]
Fall Time (tf) — [DATA_NEEDED: tf]
Maximum Power Dissipation (PD) at TC=25C — 57 W
工作结温 — -55 C to +175 C
Thermal Resistance Junction-to-Case (RthJC) — 2.2 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 50 C/W (typical, DPAK on 1 oz copper)
封装 — TO-252AA (DPAK), surface mount
RoHS 状态 — Compliant (PBF suffix)
Lead-Free — Yes (PBF suffix)

数据手册与资源

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