IRFS3006TRLPBF vs IRF7854TRPBF 对比

详细并排对比 IRFS3006TRLPBF 出自 Infineon 和 IRF7854TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFS3006TRLPBF IRFS3006TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRFS3006TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRFS3006TRLPBF ✓ 量产中

规格对比

参数 IRFS3006TRLPBF IRF7854TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.40 $0.48
FET Type N-Channel N-Channel
Technology IR HEXFET (Planar DMOS) HEXFET (planar N-channel)
Drain-Source Voltage (Vds) 60 V —
Continuous Drain Current (Id) at Tc=25C 195 A —
Pulsed Drain Current (Idm) 270 A —
On-Resistance Rds(on) max at Vgs=10V 2.5 mOhm —
Gate-Source Threshold Vgs(th) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 200 nC —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd value] —
Power Dissipation (Pd) at Tc=25C 375 W —
工作结温 -55 C to +175 C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
封装 D2PAK (TO-263AB), surface mount SO-8
安装类型 Surface Mount Surface Mount
RoHS Compliance Lead-Free (Pb-Free), RoHS Compliant —
MSL 等级 1 —
Avalanche Energy Rating Avalanche rated (per Infineon datasheet) —
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at Ta=25°C — 10 A
Power Dissipation (PD) at Ta=25°C — 2.5 W
On-Resistance RDS(on) max at VGS=10V — 13.4 mΩ
Gate-Source Threshold Voltage VGS(th) max — 4.9 V
Total Gate Charge Qg — 27 nC
工作温度范围 — -55°C to +150°C (TJ)
Lead-Free / RoHS — Yes (PBF suffix, lead-free)
Qualification — JEDEC industrial, Normal level
Solder Process — Reflow and wave-solderable
Gate Drive Voltage (recommended) — 10 V

数据手册与资源

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