IRFS3006TRLPBF vs IRF7854TRPBF Comparison

Detailed side-by-side comparison of IRFS3006TRLPBF by Infineon and IRF7854TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFS3006TRLPBF IRFS3006TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRFS3006TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRFS3006TRLPBF βœ“ Active

Specification Comparison

Parameter IRFS3006TRLPBF IRF7854TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.40 $0.48
FET Type N-Channel N-Channel
Technology IR HEXFET (Planar DMOS) HEXFET (planar N-channel)
Drain-Source Voltage (Vds) 60 V β€”
Continuous Drain Current (Id) at Tc=25C 195 A β€”
Pulsed Drain Current (Idm) 270 A β€”
On-Resistance Rds(on) max at Vgs=10V 2.5 mOhm β€”
Gate-Source Threshold Vgs(th) 2.0 V to 4.0 V β€”
Total Gate Charge (Qg) 200 nC β€”
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd value] β€”
Power Dissipation (Pd) at Tc=25C 375 W β€”
Operating Junction Temperature -55 C to +175 C β€”
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] β€”
Package D2PAK (TO-263AB), surface mount SO-8
Mounting Type Surface Mount Surface Mount
RoHS Compliance Lead-Free (Pb-Free), RoHS Compliant β€”
MSL Level 1 β€”
Avalanche Energy Rating Avalanche rated (per Infineon datasheet) β€”
Drain-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) at Ta=25Β°C β€” 10 A
Power Dissipation (PD) at Ta=25Β°C β€” 2.5 W
On-Resistance RDS(on) max at VGS=10V β€” 13.4 mΞ©
Gate-Source Threshold Voltage VGS(th) max β€” 4.9 V
Total Gate Charge Qg β€” 27 nC
Operating Temperature Range β€” -55Β°C to +150Β°C (TJ)
Lead-Free / RoHS β€” Yes (PBF suffix, lead-free)
Qualification β€” JEDEC industrial, Normal level
Solder Process β€” Reflow and wave-solderable
Gate Drive Voltage (recommended) β€” 10 V

Datasheets & Resources

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