IRFS3006TRLPBF vs IRF7854TRPBF Comparación
Comparación detallada lado a lado de IRFS3006TRLPBF por Infineon y IRF7854TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFS3006TRLPBF | IRF7854TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,40 | $0,48 |
| FET Type | N-Channel | N-Channel |
| Technology | IR HEXFET (Planar DMOS) | HEXFET (planar N-channel) |
| Drain-Source Voltage (Vds) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 195 A | — |
| Pulsed Drain Current (Idm) | 270 A | — |
| On-Resistance Rds(on) max at Vgs=10V | 2.5 mOhm | — |
| Gate-Source Threshold Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 200 nC | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd value] | — |
| Power Dissipation (Pd) at Tc=25C | 375 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value] | — |
| Encapsulado | D2PAK (TO-263AB), surface mount | SO-8 |
| Tipo de montaje | Surface Mount | Surface Mount |
| RoHS Compliance | Lead-Free (Pb-Free), RoHS Compliant | — |
| Nivel MSL | 1 | — |
| Avalanche Energy Rating | Avalanche rated (per Infineon datasheet) | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | — | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| Rango de temperatura de funcionamiento | — | -55°C to +150°C (TJ) |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Qualification | — | JEDEC industrial, Normal level |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |