IRFZ48NPBF vs IRL3705NPBF 对比
详细并排对比 IRFZ48NPBF 出自 Infineon 和 IRL3705NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFZ48NPBF | IRL3705NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $0.92 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 54 nC | — |
| Power Dissipation (PD) at TC | 130 W | — |
| 工作结温 | -55C to +175C | — |
| 封装 | TO-220AB (through-hole) | TO-220AB (3-pin through-hole) |
| 安装类型 | Through Hole | Through Hole |
| Technology | HEXFET (advanced planar) | HEXFET (planar cell, fifth generation) |
| Lead-Free (PBF suffix) | Yes | Yes |
| RoHS 状态 | Compliant | Compliant (per PBF suffix) |
| Qualification Standard | Industrial market | — |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc | — | 89 A |
| 脉冲漏极电流 | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc | — | 170 W |
| On-Resistance R_DS(on) | — | 10 mOhm (typical, V_GS = 5 V) |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | 65.3 nC |
| Maximum Junction Temperature | — | 175 C |
| Gate Drive Level | — | Logic-level |
| Avalanche Rated | — | Yes (ruggedized single-pulse avalanche) |