IRFZ48NPBF vs IRL3705NPBF Vergleich
Detaillierter Direktvergleich von IRFZ48NPBF von Infineon und IRL3705NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFZ48NPBF | IRL3705NPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,92 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 54 nC | — |
| Power Dissipation (PD) at TC | 130 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | TO-220AB (through-hole) | TO-220AB (3-pin through-hole) |
| Montageart | Through Hole | Through Hole |
| Technology | HEXFET (advanced planar) | HEXFET (planar cell, fifth generation) |
| Lead-Free (PBF suffix) | Yes | Yes |
| RoHS-Status | Compliant | Compliant (per PBF suffix) |
| Qualification Standard | Industrial market | — |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc | — | 89 A |
| Gepulster Drain-Strom | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc | — | 170 W |
| On-Resistance R_DS(on) | — | 10 mOhm (typical, V_GS = 5 V) |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | 65.3 nC |
| Maximum Junction Temperature | — | 175 C |
| Gate Drive Level | — | Logic-level |
| Avalanche Rated | — | Yes (ruggedized single-pulse avalanche) |