IRFZ48NPBF vs IRL3705NPBF Comparison
Detailed side-by-side comparison of IRFZ48NPBF by Infineon and IRL3705NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFZ48NPBF | IRL3705NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 54 nC | — |
| Power Dissipation (PD) at TC | 130 W | — |
| Operating Junction Temperature | -55C to +175C | — |
| Package | TO-220AB (through-hole) | TO-220AB (3-pin through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Technology | HEXFET (advanced planar) | HEXFET (planar cell, fifth generation) |
| Lead-Free (PBF suffix) | Yes | Yes |
| RoHS Status | Compliant | Compliant (per PBF suffix) |
| Qualification Standard | Industrial market | — |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc | — | 89 A |
| Pulsed Drain Current | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc | — | 170 W |
| On-Resistance R_DS(on) | — | 10 mOhm (typical, V_GS = 5 V) |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | 65.3 nC |
| Maximum Junction Temperature | — | 175 C |
| Gate Drive Level | — | Logic-level |
| Avalanche Rated | — | Yes (ruggedized single-pulse avalanche) |