IRL3705NPBF vs IRFZ48NPBF 对比

详细并排对比 IRL3705NPBF 出自 Infineon 和 IRFZ48NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFZ48NPBF IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220

IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220

IRFZ48NPBF ✓ 量产中

规格对比

参数 IRL3705NPBF IRFZ48NPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.92 $0.65
FET Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 55 V —
Continuous Drain Current (I_D) at Tc 89 A —
脉冲漏极电流 [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc 170 W —
On-Resistance R_DS(on) 10 mOhm (typical, V_GS = 5 V) —
Gate Threshold V_GS(th) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Q_g 65.3 nC —
Maximum Junction Temperature 175 C —
Technology HEXFET (planar cell, fifth generation) HEXFET (advanced planar)
封装 TO-220AB (3-pin through-hole) TO-220AB (through-hole)
安装类型 Through Hole Through Hole
Gate Drive Level Logic-level —
Avalanche Rated Yes (ruggedized single-pulse avalanche) —
Lead-Free (PBF suffix) Yes Yes
RoHS 状态 Compliant (per PBF suffix) Compliant
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC — 64 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) at VGS=10V — 14 mΩ (maximum)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — 54 nC
Power Dissipation (PD) at TC — 130 W
工作结温 — -55C to +175C
Qualification Standard — Industrial market

数据手册与资源

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