IRL3705NPBF vs IRFZ48NPBF 비교
다음의 상세 나란히 비교: IRL3705NPBF 제조: Infineon 및 IRFZ48NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRL3705NPBF | IRFZ48NPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.92 | $0.65 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc | 89 A | — |
| 펄스 드레인 전류 | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc | 170 W | — |
| On-Resistance R_DS(on) | 10 mOhm (typical, V_GS = 5 V) | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | 65.3 nC | — |
| Maximum Junction Temperature | 175 C | — |
| Technology | HEXFET (planar cell, fifth generation) | HEXFET (advanced planar) |
| 패키지 | TO-220AB (3-pin through-hole) | TO-220AB (through-hole) |
| 실장 유형 | Through Hole | Through Hole |
| Gate Drive Level | Logic-level | — |
| Avalanche Rated | Yes (ruggedized single-pulse avalanche) | — |
| Lead-Free (PBF suffix) | Yes | Yes |
| RoHS 상태 | Compliant (per PBF suffix) | Compliant |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 64 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | — | 14 mΩ (maximum) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | 54 nC |
| Power Dissipation (PD) at TC | — | 130 W |
| 동작 접합 온도 | — | -55C to +175C |
| Qualification Standard | — | Industrial market |